Flexible Electronics: Highly Flexible and Transparent Multilayer MoS2 Transistors with Graphene Electrodes (Small 19/2013). Issue 19 (4th October 2013)

• Record Type: Journal Article
• Authors: Yoon, Jongwon; Park, Woojin; Bae, Ga‐Yeong; Kim, Yonghun; Jang, Hun Soo; Hyun, Yujun; Lim, Sung Kwan; Kahng, Yung Ho; Hong, Woong‐Ki; Lee, Byoung Hun; Ko, Heung Cho
• Is Part Of: Small. Volume 9:Issue 19(2013:Oct.)
• Page Start: 3185
• Page End: 3185
• Publication Date: 2013-10-04
• Subjects: Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201370112
• Languages: English
• ISSNs: 1613-6810

Abstract

<abstract abstract-type="graphical" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p>A highly flexible and transparent transistor based on an exfoliated MoS₂ channel and CVD‐grown graphene electrodes is reported by W.‐K. Hong, H. C. Ko, and co‐workers <ext-link ext-link-type="doi" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink">on page 3295</ext-link>. Introducing 2D nanomaterials provides high mechanical flexibility (available bending radius: ± 2.2 mm), optical transmittance (74%), and high current on/off ratio (&gt;10⁴) with an average field effect mobility of ≈4.7 cm² V⁻¹ s⁻¹, all of which cannot be achieved by other transistors consisting of a MoS₂ active channel/metal electrodes or graphene channel/graphene electrodes. In particular, the MoS₂/graphene interface has a low Schottky barrier of ≈22 meV, which is comparable to the MoS₂/metal interface. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg3j6901bn" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>