Highly Flexible and Transparent Multilayer MoS2 Transistors with Graphene Electrodes. Issue 19 (18th February 2013)

• Record Type: Journal Article
• Authors: Yoon, Jongwon; Park, Woojin; Bae, Ga‐Yeong; Kim, Yonghun; Jang, Hun Soo; Hyun, Yujun; Lim, Sung Kwan; Kahng, Yung Ho; Hong, Woong‐Ki; Lee, Byoung Hun; Ko, Heung Cho
• Is Part Of: Small. Volume 9:Issue 19(2013:Oct.)
• Page Start: 3295
• Page End: 3300
• Publication Date: 2013-02-18
• Subjects: Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201300134
• Languages: English
• ISSNs: 1613-6810

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>A highly flexible and transparent transistor is developed based on an exfoliated MoS₂ channel and CVD‐grown graphene source/drain electrodes. Introducing the 2D nanomaterials provides a high mechanical flexibility, optical transmittance (∼74%), and current on/off ratio (&gt;10⁴) with an average field effect mobility of ∼4.7 cm² V⁻¹ s⁻¹, all of which cannot be achieved by other transistors consisting of a MoS₂ active channel/metal electrodes or graphene channel/graphene electrodes. In particular, a low Schottky barrier (∼22 meV) forms at the MoS₂/graphene interface, which is comparable to the MoS₂/metal interface. The high stability in electronic performance of the devices upon bending up to ±2.2 mm in compressive and tensile modes, and the ability to recover electrical properties after degradation upon annealing, reveal the efficacy of using 2D materials for creating highly flexible and transparent devices.</p> </abstract>