Synthesis of Boron‐Doped Graphene Monolayers Using the Sole Solid Feedstock by Chemical Vapor Deposition. Issue 8 (6th March 2013)

• Record Type: Journal Article
• Authors: Wang, Huan; Zhou, Yu; Wu, Di; Liao, Lei; Zhao, Shuli; Peng, Hailin; Liu, Zhongfan
• Is Part Of: Small. Volume 9:Issue 8(2013:Apr.)
• Page Start: 1316
• Page End: 1320
• Publication Date: 2013-03-06
• Subjects: Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201203021
• Languages: English
• ISSNs: 1613-6810

Abstract

<abstract abstract-type="graphical" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>Substitutionally boron‐doped monolayer graphene film</bold> is grown on a large scale by using a sole phenylboronic acid as the source in a low‐pressure chemical vapor deposition system. The B‐doped graphene film is a homogeneous monolayer with high crystalline quality, which exhibits a stable p‐type doping behavior with a considerably high room‐temperature carrier mobility of about 800 cm² V⁻¹ s⁻¹. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg1xrnksm7" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>