Top‐Down Fabricated Silicon‐Nanowire‐Based Field‐Effect Transistor Device on a (111) Silicon Wafer. Issue 4 (12th November 2012)

• Record Type: Journal Article
• Authors: Yu, Xiao; Wang, Yuchen; Zhou, Hong; Liu, Yanxiang; Wang, Yi; Li, Tie; Wang, Yuelin
• Is Part Of: Small. Volume 9:Issue 4(2013:Feb.)
• Page Start: 525
• Page End: 530
• Publication Date: 2012-11-12
• Subjects: Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201201599
• Languages: English
• ISSNs: 1613-6810

Abstract

<abstract abstract-type="graphical" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>The unique anisotropic wet‐etching mechanism of a (111) silicon wafer</bold> facilitates the highly controllable top‐down fabrication of silicon nanowires (SiNWs) with conventional microfabrication technology. The fabrication process is compatible with the surface manufacturing technique, which is employed to build a nanowire‐based field‐effect transistor structure on the fabricated SiNW. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg1tvfw2wj" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>