Silicon surface passivation by aluminium oxide studied with electron energy loss spectroscopy. Issue 11 (14th August 2013)

• Record Type: Journal Article
• Authors: Hoex, Bram; Bosman, Michel; Nandakumar, Naomi; Kessels, W. M. M.
• Is Part Of: Physica status solidi. Volume 7:Issue 11(2013:Nov.)
• Page Start: 937
• Page End: 941
• Publication Date: 2013-08-14
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201308081
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>The origin behind crystalline silicon surface passivation by Al₂O₃ films is studied in detail by means of spatially‐resolved electron energy loss spectroscopy. The bonding configurations of Al and O are studied in as‐deposited and annealed Al₂O₃ films grown on c‐Si substrates by plasma‐assisted and thermal atomic layer deposition. The results confirm the presence of an interfacial SiO₂‐like film and demonstrate changes in the ratio between tetrahedrally and octahedrally coordinated Al in the films after annealing. These observations reveal the underlying origin of c‐Si surface passivation by Al₂O₃. (© 2013 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>