Growth of epitaxial c ‐plane ZnO film on a ‐plane sapphire by radio frequency reactive magnetron sputtering. Issue 8 (25th June 2013)

• Record Type: Journal Article
• Authors: Liu, Hongyan; Gao, Shuang; Zeng, Fei; Song, Cheng; Pan, Feng
• Is Part Of: Physica status solidi. Volume 7:Issue 8(2013:Aug.)
• Page Start: 587
• Page End: 589
• Publication Date: 2013-06-25
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201307197
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>In this Letter, we report the successful growth of high quality <italic>c</italic> ‐plane oriented epitaxial ZnO films on <italic>a</italic> ‐plane sapphire substrates by using radio frequency reactive magnetron sputtering. The effect of substrate temperature on the structural and optical properties has been investigated. X‐ray diffraction (XRD) studies reveal that the ZnO film is grown epitaxially on <italic>a</italic> ‐plane sapphire substrate, and the film quality is improv‐ ed as the substrate temperature is increased. Photoluminescence (PL) results manifest that screw dislocations can exert great influence on the optical properties. It is found that the line width of the near‐band‐edge emission of PL decreases linearly with increase in screw density. In addition, a simple and effective method is proposed to assess the defect density in epitaxial ZnO films by performing PL measurement. (© 2013 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>