Mechanical stress effect on the crystallization behavior of Ge2Sb2Te5 films studied by electrical resistance measurement. Issue 7 (6th June 2013)

• Record Type: Journal Article
• Authors: Du, Yingchao; Kan, Yi; Lu, Xiaomei; Liu, Yunfei; Bo, Huifeng; Cai, Wei; Hu, Dazhi; Huang, Fengzhen; Zhu, Jinsong
• Is Part Of: Physica status solidi. Volume 7:Issue 7(2013:Jul.)
• Page Start: 506
• Page End: 509
• Publication Date: 2013-06-06
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201307167
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>The mechanical stress effect on the crystallization behaviour of Ge₂Sb₂Te₅(GST) thin films is carefully investigated by electrical resistance measurements. It is found that the crystallization temperature of GST films increases as external compressive stress is applied, while the crystallization temperature decreases under tensile stress. We also find that the uneven distribution of extrinsic stress can widen the span of transition temperature. These results clearly demonstrate that mechanical stress plays an important role during the crystallization process of GST films and may further influence the reliability and storage speed of relevant devices. (© 2013 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>