Improved control of the phosphorous surface concentration during in‐line diffusion of c‐Si solar cells by APCVD. Issue 5 (18th March 2013)

• Record Type: Journal Article
• Authors: Davis, Kristopher O.; Jiang, Kaiyun; Demberger, Carsten; Zunft, Heiko; Haverkamp, Helge; Habermann, Dirk; Schoenfeld, Winston V.
• Is Part Of: Physica status solidi. Volume 7:Issue 5(2013:May)
• Page Start: 319
• Page End: 321
• Publication Date: 2013-03-18
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201307020
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Emitter formation for industrial crystalline silicon (c‐Si) solar cells is demonstrated by the deposition of phosphorous‐doped silicate glasses (PSG) on p‐type monocrystalline silicon wafers via in‐line atmospheric pressure chemical vapor deposition (APCVD) and subsequent thermal diffusion. Processed wafers with and without the PSG layers have been analysed by SIMS measurements to investigate the depth profiles of the resultant phosphorous emitters. Subsequently, complete solar cells were fabricated using the phosphorous emitters formed by doped silicate glasses to determine the impact of this high‐throughput doping method on cell performance. (© 2013 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>