Is graphene on copper doped?. Issue 9 (22nd July 2013)

• Record Type: Journal Article
• Authors: Marsden, Alexander J.; Asensio, Maria‐Carmen; Avila, José; Dudin, Pavel; Barinov, Alexei; Moras, Paolo; Sheverdyaeva, Polina M.; White, Thomas W.; Maskery, Ian; Costantini, Giovanni; Wilson, Neil R.; Bell, Gavin R.
• Is Part Of: Physica status solidi. Volume 7:Issue 9(2013:Sep.)
• Page Start: 643
• Page End: 646
• Publication Date: 2013-07-22
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201307224
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Angle‐resolved photoemission spectroscopy (ARPES) and X‐ray photoemission spectroscopy have been used to characterise epitaxially ordered graphene grown on copper foil by low‐pressure chemical vapour deposition. A short vacuum anneal to 200 °C allows observation of ordered low energy electron diffraction patterns. High quality Dirac cones are measured in ARPES with the Dirac point at the Fermi level (undoped graphene). Annealing above 300 °C produces n‐type doping in the graphene with up to 350 meV shift in Fermi level, and opens a band gap of around 100 meV.</p> <p> <boxed-text content-type="graphic" position="anchor" orientation="portrait"> <graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg3hxhjd0j" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /> </boxed-text> </p> <p>Dirac cone dispersion for graphene on Cu foil after vacuum anneals (left: 200 °C, undoped; right: 500 °C, n‐doped). Centre: low energy electron diffraction from graphene on Cu foil after 200 °C anneal. Data from <italic>Antares</italic> (SOLEIL).</p> <p>(© 2013 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>