Efficiency enhancement of Cu(In, Ga)Se2 thin‐film solar cells by a post‐deposition treatment with potassium fluoride. Issue 9 (29th July 2013)

• Record Type: Journal Article
• Authors: Laemmle, Anke; Wuerz, Roland; Powalla, Michael
• Is Part Of: Physica status solidi. Volume 7:Issue 9(2013:Sep.)
• Page Start: 631
• Page End: 634
• Publication Date: 2013-07-29
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201307238
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Alkali‐free Cu(In, Ga)Se₂(CIGS) absorbers grown on Mo‐coated alumina (Al₂O₃) substrates were doped with potassium (K) after CIGS growth by a potassium fluoride (KF) post‐deposition treatment (PDT). The addition of K to the absorber leads to a strong increase in cell efficiency from 10.0% for the K‐free cell to 14.2% for the K‐doped cell, mainly driven by an increase in the open‐circuit voltage <italic>V</italic>_oc and the fill factor FF, and to an increase in the net charge carrier density. Hence K doping by KF‐PDT is comparable to doping with Na.</p> <p> <boxed-text content-type="graphic" position="anchor" orientation="portrait"> <graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg3hxhjf8g" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /> </boxed-text> </p> <p> <italic>J</italic> –<italic>V</italic> characteristics of a CIGS solar cell with KF‐PDT (red solid line) and of a K‐free reference cell without treatment (black dashed line). The solar cell treated with K shows a strong increase in <italic>V</italic>_oc and FF compared to the solar cell without K.</p> <p>(© 2013 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>