Transport properties of Sb2Te3/Bi2Te3 topological insulator heterostructures. Issue 1 (25th October 2012) - Zhang, Zuocheng
Abstract We report transport studies on Sb2Te3/Bi2Te3 topological insulator heterostructures grown by molecular beam epitaxy. Two devices with different Sb2Te3 thickness are fabricated and investigated. Under certain gate voltage, the Hall resistance exhibits strongly nonlinear behaviour and changes sign with increasing magnetic field, indicating the coexistence of electron‐ and hole‐type charge carriers on the opposite surfaces of the heterostructure. Gate‐tuned magnetoresistance measurements reveal the same phenomenon. This work paves the road for realizing the proposed exotic quantum phenomena that require opposite polarity of the surface Dirac fermions in topological insulator based structures. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)