Etched graphene single electron transistors on hexagonal boron nitride in high magnetic fields. Issue 12 (14th November 2013)

• Record Type: Journal Article
• Authors: Epping, A.; Engels, S.; Volk, C.; Watanabe, K.; Taniguchi, T.; Trellenkamp, S.; Stampfer, C.
• Is Part Of: Physica status solidi. Volume 250:Issue 12(2013:Dec.)
• Page Start: 2692
• Page End: 2696
• Publication Date: 2013-11-14
• Subjects: Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201300295
• Languages: English
• ISSNs: 0370-1972

Abstract

<abstract abstract-type="main"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="pssb201300295-sec-0001" sec-type="section"> <p>We report on the fabrication and electrical characterization of etched graphene single electron transistors (SETs) of various sizes on hexagonal boron nitride (hBN) in high magnetic fields. The electronic transport measurements show a slight improvement compared to graphene SETs on SiO₂. In particular, SETs on hBN are more stable under the influence of perpendicular magnetic fields up to 9 T in contrast to measurements reported on SETs on SiO₂. This result indicates a reduced surface disorder potential in SETs on hBN, which might be an important step toward clean and more controllable graphene quantum dots (QDs). <inline-graphic xlink:href="ark:/27927/pgg3z8s6jfm" content-type="pssb201300295-gra-0001" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></p> </sec> </abstract>