Disorder in order: silicon versus graphene. Issue 5 (4th March 2013)

• Record Type: Journal Article
• Authors: Popescu, Mihai; Sava, Florinel; Lőrinczi, Adam; Velea, Alin
• Is Part Of: Physica status solidi. Volume 250:Issue 5(2013:May)
• Page Start: 1008
• Page End: 1010
• Publication Date: 2013-03-04
• Subjects: Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201248516
• Languages: English
• ISSNs: 0370-1972

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p> <boxed-text content-type="graphic" position="anchor" orientation="portrait"> <graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg1zvp9bfz" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /> </boxed-text> </p> <p>The topological transition from order to disorder in crystalline silicon was investigated by a computer simulation procedure. The gradually introduction of topological Wooten–Winer–Weaire defect states makes the crystal change in a more and more disordered assembly of atoms. The characterization of deformation energy around a single defect state is analyzed. The topological transition from graphene structure to an amorphous carbon layer, by introduction of a high number of Stone–Wales defect‐type states was evidenced. The comparison of the disordered structure in tetrahedrally bonded semiconductors (silicon) and a two‐dimensional network based on graphene structure was made.</p> </abstract>