Synthesis and characterization of core–shell ZnO/ZnSe nanowires grown by MOCVD. Issue 10 (17th September 2013)

• Record Type: Journal Article
• Authors: Amiri, Gaëlle; Souissi, Ahmed; Hanèche, Nadia; Vilar, Christèle; Lusson, Alain; Sallet, Vincent; Galtier, Pierre
• Is Part Of: Physica status solidi. Volume 250:Issue 10(2013:Oct.)
• Page Start: 2132
• Page End: 2136
• Publication Date: 2013-09-17
• Subjects: Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201300011
• Languages: English
• ISSNs: 0370-1972

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="pssb201300011-sec-0001" sec-type="section"> <p>ZnO/ZnSe core/shell nanowire arrays have been grown by metal‐organic chemical vapor deposition on <italic>c</italic>‐plane sapphire. The morphology and the structure of the nanostructures were characterized by scanning electron microscopy and transmission electron microscopy. They exhibit well‐aligned core/shell ZnO/ZnSe nanowires with a good crystalline quality although some surface roughness is associated to the deposition of ZnSe on the lateral ZnO facets. X‐ray diffraction combined with Raman spectroscopy and electron diffraction demonstrate that ZnO grows along the <italic>c</italic>‐axis with the wurtzite (W) structure, but ZnSe can be deposited epitaxially in the zinc‐blende (ZB) structure on the M‐facet of the wires. Optical transmission measurements reveal an additional contribution at about 2.15 eV attributed to the type‐II interfacial transition between the valence band of ZB‐ZnSe and the conduction band of W‐ZnO. These observations confirm the potential interest of ZnO/ZnSe core/shell nanostructures for photovoltaic applications.</p> </sec> </abstract>