Role of native point defects and Ga diffusion on electrical properties of degenerate Ga‐doped ZnO. Issue 10 (27th August 2013)

• Record Type: Journal Article
• Authors: Doutt, Daniel R.; Balaz, S.; Isabella, L.; Look, D. C.; Leedy, K. D.; Brillson, L. J.
• Is Part Of: Physica status solidi. Volume 250:Issue 10(2013:Oct.)
• Page Start: 2114
• Page End: 2117
• Publication Date: 2013-08-27
• Subjects: Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201200945
• Languages: English
• ISSNs: 0370-1972

Abstract

<abstract abstract-type="main"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="pssb201200945-sec-0001" sec-type="section"> <p>We used a complement of depth‐resolved cathodoluminescence spectroscopy (DRCLS), X‐ray photoemission spectroscopy (XPS), and Hall‐effect measurements to demonstrate the interplay of Zn vacancy‐related (V_Zn‐R) defects with dopants in degenerately Ga‐doped ZnO grown by pulsed laser deposition. DRCLS V_Zn‐R/conduction band emission ratios relate to acceptor/donor concentrations, increasing rapidly for growth temperatures &gt;400 °C, evidently because Ga atoms are inhibited from incorporating efficiently on available V_Zn sites. Elemental XPS depth profiles reveal a temperature‐dependent Ga interface segregation due to Ga bulk diffusion during growth. DRCLS Fermi level thresholds provide a useful indicator of carrier density, revealing depth variations in carrier density that anticorrelate with V_Zn‐R densities on a nm scale, confirming the acceptor nature of V_Zn‐R defects.</p> </sec> </abstract>