Cite
HARVARD Citation
Pettinari, G. et al. (n.d.). Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi‐induced acceptor states. Physica status solidi. 250 (4), pp. 779-786. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Pettinari, G. et al. (n.d.). Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi‐induced acceptor states. Physica status solidi. 250 (4), pp. 779-786. [Online].