Fabrication and UV‐sensing properties of one‐dimensional β‐Ga2O3 nanomaterials. Issue 9 (14th June 2013)

• Record Type: Journal Article
• Authors: Feng, Haifeng; Hao, Weichang; Zhao, Changzheng; Xin, Xiandong; Cheng, Jinyang; Cui, Yimin; Chen, Yan; Wang, Wenjun
• Is Part Of: Physica status solidi. Volume 210:Issue 9(2013:Sep.)
• Page Start: 1861
• Page End: 1865
• Publication Date: 2013-06-14
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201329318
• Languages: English
• ISSNs: 1862-6300

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="pssa201329318-sec-0001" sec-type="section"> <p>β‐Ga₂O₃ nanowires and nanobelts with a length range of tens of micrometers to a few millimeters were successfully fabricated by a simple <italic>in situ</italic> chemical vapor deposition (CVD) method under normal pressure without any catalysts. The morphology and microstructure of the samples were studied by SEM, XRD, and EDS. The results indicated that the morphology of Ga₂O₃ depends on the effective heating time. Ga₂O₃ nanostructures were mainly collected at the gallium source position instead of in the downstream area. So, we propose that the growth process can be explained by a vapor–solid (VS) model. The ultraviolet (UV) sensing properties of a single nanowire were tested. From the nonlinear <italic>I</italic>–<italic>V</italic> curves, we find that a single nanowire behaves as a rectifier and has asymmetric characteristics. The photoresponse characterization presents that response time and recovery time were about 0.32 and 0.08 s, respectively. Our result indicated that a single β‐Ga₂O₃ nanowire possesses excellent UV sensing properties and it should be a good candidate for UV‐sensor development.</p> </sec> </abstract>