Multilayered structure and enhanced thermoelectric properties of Bi1.5Sb0.5Te3 film with preferential growth. Issue 12 (17th September 2013)

• Record Type: Journal Article
• Authors: Tan, Ming; Deng, Yuan; Hao, Yanming
• Is Part Of: Physica status solidi. Volume 210:Issue 12(2013:Dec.)
• Page Start: 2611
• Page End: 2616
• Publication Date: 2013-09-17
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201329368
• Languages: English
• ISSNs: 1862-6300

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="pssa201329368-sec-0001" sec-type="section"> <p>In this paper, uniquely (0 1 5)‐preferential growth plane and alternating stress field can favorably influence the carrier and phonon transport properties of multilayered films. The p‐type Bi<sub>1.5</sub>Sb<sub>0.5</sub>Te<sub>3</sub> multilayered film has been successfully fabricated by a simple thermal co‐evaporation technique. The composition, microstructure, and in‐plane thermoelectric (TE) properties of films have been characterized and measured, respectively. The measurement results show that the multilayered Bi<sub>1.5</sub>Sb<sub>0.5</sub>Te<sub>3</sub> film is (0 1 5)‐preferential growth. The multilayered structure film is composed of the (0 1 5)‐oriented and the ordinary nanolayers. The properties of the multilayered Bi<sub>1.5</sub>Sb<sub>0.5</sub>Te<sub>3</sub> film has been significantly enhanced in comparison with those of the highly (0 1 5)‐oriented and the ordinary Bi<sub>1.5</sub>Sb<sub>0.5</sub>Te<sub>3</sub> films. The multilayered Bi<sub>1.5</sub>Sb<sub>0.5</sub>Te<sub>3</sub> film with a TE dimensionless figure‐of‐merit <italic>ZT</italic> = 1.28 was obtained at room temperature. The transport mechanism of multilayered structure is proposed and investigated. The internal strain field and (0 1 5)‐preferential growth plane are the main reasons for the properties enhancement observed in the multilayered Bi<sub>1.5</sub>Sb<sub>0.5</sub>Te<sub>3</sub> film. Introduction of such uniquely (0 1 5)‐preferential growth plane and alternating stress field into TE films is therefore a very promising approach.</p> </sec> </abstract>