N‐ZnO/i‐InGaN/p‐GaN heterostructure for solar cell application. Issue 10 (30th July 2013)

• Record Type: Journal Article
• Authors: Nam, Seung‐Yong; Choi, Yong‐Seok; Song, Young‐Ho; Jung, Myoung‐Ho; Kang, Chang Mo; Kong, Duk‐Jo; Park, Seong‐Ju; Lee, Jeong‐Yong; Namkoong, Gon; Lee, Dong‐Seon
• Is Part Of: Physica status solidi. Volume 210:Issue 10(2013:Oct.)
• Page Start: 2214
• Page End: 2218
• Publication Date: 2013-07-30
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201329158
• Languages: English
• ISSNs: 1862-6300

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <sec id="pssa201329158-sec-0001" sec-type="section"> <p>We report hybrid n‐ZnO/i‐InGaN/p‐GaN solar cells in which the n‐GaN layer of n‐GaN/i‐InGaN/p‐GaN solar cell was replaced with n‐type ZnO. In this study, inverted structures were used for hybrid ZnO/nitride solar cells where p‐type GaN was first grown on sapphire substrate, followed by i‐InGaN and n‐ZnO layers. The as‐fabricated device showed high series resistance and low energy conversion efficiency due to the formation of damaged p‐GaN region during dry etching. On the other hand, formation of microrods on the p‐GaN eased the removal of the damaged p‐GaN resulting in significantly lowered series resistance and enhanced energy conversion efficiency. <inline-graphic xlink:href="ark:/27927/pgg3ss5mnjv" content-type="pssa201329158-gra-0001" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></p> <p>(a) n‐ZnO/i‐InGaN/p‐GaN solar cell structure without microrods, (b) n‐ZnO/i‐InGaN/p‐GaN solar cell structure with microrods, and (c) magnified image of the dashed box on (b).</p> </sec> </abstract>