Analysis and modeling of localized faceting on 4H‐SiC epilayer surfaces. Issue 11 (29th August 2013)

• Record Type: Journal Article
• Authors: Dong, Lin; Sun, Guosheng; Zheng, Liu; Liu, Xingfang; Zhang, Feng; Yan, Guoguo; Tian, Lixin; Li, Xiguang; Wang, Zhanguo
• Is Part Of: Physica status solidi. Volume 210:Issue 11(2013:Nov.)
• Page Start: 2503
• Page End: 2509
• Publication Date: 2013-08-29
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201329204
• Languages: English
• ISSNs: 1862-6300

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <sec id="pssa201329204-sec-0001" sec-type="section"> <p>Comparing with the well‐established theory of periodic surface faceting, the formation mechanism of localized surface faceting is not yet clear. We investigate the localized surface faceting of 4H silicon carbide (4H‐SiC) epilayers using atomic force microscopy (AFM). The AFM measurements reveal that this phenomenon gives rise to the appearance of isolated macrosteps with multiple unit cell heights. A model for the localized surface faceting is presented based on the AFM cross‐sectional height profile. In this model, the isolated macrostep appears in the form of the double‐hill–valley structure. We formulize the total surface free energy in the model and explain the important structural features of isolated macrosteps observed by AFM. A generalized model for the localized surface faceting with multiple‐hill–valley structure is further proposed to analyze the transition from the localized surface faceting to the periodic surface faceting. Our results provide a basis for understanding the localized surface faceting phenomenon of 4H‐SiC epilayers.</p> </sec> </abstract>