(GeTe)x–(Sb2Te3)1–x phase‐change thin films as potential thermoelectric materials. Issue 1 (26th September 2012)

• Record Type: Journal Article
• Authors: Sittner, Ernst‐Roland; Siegert, Karl Simon; Jost, Peter; Schlockermann, Carl; Lange, Felix Rolf Lutz; Wuttig, Matthias
• Is Part Of: Physica status solidi. Volume 210:Issue 1(2013:Jan.)
• Page Start: 147
• Page End: 152
• Publication Date: 2012-09-26
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201228397
• Languages: English
• ISSNs: 1862-6300

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Phase‐change materials form a unique material class, characterized by a rather unusual combination of physical properties. Exhibiting fast crystallization and a large contrast in optical reflectivity and electrical conductivity between the amorphous and the crystalline state, they are ideally suited for non‐volatile data storage. Here, we present the thermoelectric properties of Ge₃Sb₂Te₆ and Ge₈Sb₂Te₁₁ phase‐change alloys measured between room temperature and 120 °C. Both systems display intrinsically high Seebeck coefficients and low thermal conductivities. While low electrical conductivities preclude the employment of Ge₃Sb₂Te₆ in thermoelectric applications, the GeTe rich Ge₈Sb₂Te₁₁ exhibits high <italic>ZT</italic>s of up to 0.7 in the temperature range investigated, which renders this alloy a potential p‐type thermoelectric material.</p> </abstract>