Cite
HARVARD Citation
Sahonta, S. et al. (n.d.). Properties of trench defects in InGaN/GaN quantum well structures. Physica status solidi. 210 (1), pp. 195-198. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Sahonta, S. et al. (n.d.). Properties of trench defects in InGaN/GaN quantum well structures. Physica status solidi. 210 (1), pp. 195-198. [Online].