On the "Growth" of Nano‐Structures on c‐Silicon via Self‐Masked Plasma Etching Processes. Issue 10 (2nd July 2013)

• Record Type: Journal Article
• Authors: Di Mundo, Rosa; Palumbo, Fabio; Barucca, Gianni; Sabato, Gianfranco; d'Agostino, Riccardo
• Is Part Of: Plasma processes and polymers. Volume 10:Issue 10(2013:Oct.)
• Page Start: 843
• Page End: 849
• Publication Date: 2013-07-02
• Subjects: Plasma polymerization -- Periodicals; Plasma-enhanced chemical vapor deposition -- Periodicals; Plasma chemistry -- Periodicals
• DOI: 10.1002/ppap.201300031
• Languages: English
• ISSNs: 1612-8850

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="ppap201300031-sec-0001" sec-type="section"> <p>Plasma etching is emerging as reliable top‐down self‐masked approach for nanotexturing on a wafer‐scale the surface of crystalline silicon. Differently sized and shaped nano‐bumps can be obtained as a function of plasma parameters and, accordingly, different optical and optoelectronic effects have been already reported. In this work, we utilize a combination of techniques such as transmission electron microscopy, X‐ray photoelectron spectroscopy, field emission gun scanning electron microscopy, in order to enlighten on structure, composition, and topography of these nano‐objects. The results indicate that they present a composite structure, with a crystalline conic base and an amorphous extension with inclusion of metallic nano‐crystals. These and other evidences suggest that the structures are partly formed by the sculpting action typically ascribed to the etching process, partly due to a deposition of amorphous composite matter, likely aggregated by a catalytic action of the metal particles.<inline-graphic xlink:href="ark:/27927/pgg3jz84nf6" content-type="ppap201300031-gra-0001" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></p> </sec> </abstract>