A novel photo‐acid generator bound molecular glass resist with a single protecting group. Issue 9 (7th February 2013)

• Record Type: Journal Article
• Authors: Kasai, Tatsuaki; Higashihara, Tomoya; Ueda, Mitsuru
• Is Part Of: Journal of polymer science. Volume 51:Issue 9(2013:May)
• Page Start: 1956
• Page End: 1962
• Publication Date: 2013-02-07
• Subjects: 547
• DOI: 10.1002/pola.26575
• Languages: English
• ISSNs: 0887-624X

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>A novel photo‐acid generator (PAG) bound molecular glass photoresist with a single protecting group has been developed as a promising resist material for use in microelectronics. This single component molecular resist was prepared in four steps starting from 9, 9‐<italic>bis</italic>(4‐hydroxyphenyl)fluorene. The single component molecular resist exhibited good thermal properties, such as a 10% weight loss temperature of 200 °C and a glass transition temperature of 91 °C. This resist showed a good sensitivity of 60 μC/cm² with e‐beam exposure (50 keV). On the other hand, the fine pattern with a half‐pitch of 50 nm in the presence of 4 wt % quencher, trioctylamine, was obtained using electron‐beam (100 keV) lithography. The LER value was 8.2 nm (3σ, 60 nm half‐pitch patterns). © 2013 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2013</p> </abstract>