RF characterization of 100‐nm separate gate InAlAs/InGaAs DG‐HEMT. Issue 11 (26th August 2013)
- Record Type:
- Journal Article
- Title:
- RF characterization of 100‐nm separate gate InAlAs/InGaAs DG‐HEMT. Issue 11 (26th August 2013)
- Main Title:
- RF characterization of 100‐nm separate gate InAlAs/InGaAs DG‐HEMT
- Authors:
- Parveen,
Gupta, Mridula
Gupta, R. S.
Jogi, Jyotika - Abstract:
- <abstract abstract-type="main"> <title>ABSTRACT</title> <p>This article presents a three port analysis for separate gate In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.53</sub>Ga<sub>0.47</sub>As DG‐HEMT and a small signal equivalent circuit is developed using charge control model. The various intrinsic short circuit admittance parameters (Y‐parameters) are evaluated to extract scattering parameters, to determine the maximum transducer power gain of the device. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:2796–2803, 2013</p> </abstract>
- Is Part Of:
- Microwave and optical technology letters. Volume 55:Issue 11(2013:Nov.)
- Journal:
- Microwave and optical technology letters
- Issue:
- Volume 55:Issue 11(2013:Nov.)
- Issue Display:
- Volume 55, Issue 11 (2013)
- Year:
- 2013
- Volume:
- 55
- Issue:
- 11
- Issue Sort Value:
- 2013-0055-0011-0000
- Page Start:
- 2796
- Page End:
- 2803
- Publication Date:
- 2013-08-26
- Subjects:
- Microwaves -- Periodicals
Optics -- Periodicals
621 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1098-2760 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/mop.27935 ↗
- Languages:
- English
- ISSNs:
- 0895-2477
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5761.071500
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 3927.xml