Design of broadband and high‐efficiency class‐E amplifier with pHEMT using a novel low‐pass microstrip resonator cell. Issue 5 (23rd March 2013)

• Record Type: Journal Article
• Authors: Hayati, Mohsen; Lotfi, Ali
• Is Part Of: Microwave and optical technology letters. Volume 55:Issue 5(2013:May)
• Page Start: 1118
• Page End: 1124
• Publication Date: 2013-03-23
• Subjects: Microwaves -- Periodicals; Optics -- Periodicals; 621
• DOI: 10.1002/mop.27490
• Languages: English
• ISSNs: 0895-2477

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>In this article, a high‐efficient class‐E amplifier design with low voltage and broadband characteristics using a novel Front Coupled Tapered Compact Microstrip Resonant Cell is presented. The proposed micorstrip resonator is used as the harmonic control network in order to suppress higher order harmonics, which obtained the optimized impedance matching for the fundamental and harmonics. The class‐E amplifier is realized from 0.7 to 1.8 GHz, and obtained the power added efficiency of 72.5–77.5%. The maximum value of Power added efficiency (PAE) is 79.7% with 11‐dBm input power at 1.5 GHz. The designed class‐E amplifier using the proposed harmonic control network gained 15.34% increment in PAE, and 25.6% reduction in the circuit size in comparison with the conventional class‐E amplifier. The simulation and measurement results show the validity of the proposed design procedure of the broadband class‐E amplifier using a novel microstrip resonator cell. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1118–1124, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27490</p> </abstract>