Applying line‐series‐shunt calibration to one‐tier on‐wafer device de‐embedding up to millimeter waves. Issue 4 (27th February 2013)

• Record Type: Journal Article
• Authors: Huang, Chien‐Chang; Chen, Yu‐Chuan
• Is Part Of: Microwave and optical technology letters. Volume 55:Issue 4(2013:Apr.)
• Page Start: 744
• Page End: 747
• Publication Date: 2013-02-27
• Subjects: Microwaves -- Periodicals; Optics -- Periodicals; 621
• DOI: 10.1002/mop.27445
• Languages: English
• ISSNs: 0895-2477

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>In this article, a one‐tier on‐wafer device de‐embedding methodology up to millimeter wave regions is presented by using the line‐series‐shunt calibration technique. All the calibration and de‐embedding processes are accomplished without the needs of impedance‐standard‐substrate (ISS), which defines the reference impedance in the conventional on‐wafer measurements. Three on‐chip standards, namely a section of transmission line (TL), a series resistor, and a shunt resistor, are utilized to perform the calibration where the characteristics of the standards need not to be known in advance and can be evaluated through the self‐calibration procedure. The proposed method is examined by the GaAs 0.15 μm pseudomorphic high electron mobility transistor (pHEMT) device in the measured frequencies from 2 GHz to 90 GHz. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:744–747, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27445</p> </abstract>