High‐power HgGa2S4 optical parametric oscillator pumped at 1064 nm and operating at 100 Hz. Issue 4 (2nd April 2013)

• Record Type: Journal Article
• Authors: Tyazhev, Aleksey; Marchev, Georgi; Badikov, Valeriy; Esteban‐Martin, Adolfo; Badikov, Dmitrii; Panyutin, Vladimir; Shevyrdyaeva, Galina; Sheina, Svetlana; Fintisova, Anna; Petrov, Valentin
• Is Part Of: Laser & photonics reviews. Volume 7:Issue 4(2013:Jul.)
• Page Start: L21
• Page End: L24
• Publication Date: 2013-04-02
• Subjects: Lasers -- Periodicals; Photonics -- Periodicals; Lasers -- Périodiques; Photonique -- Périodiques; 621.36
• DOI: 10.1002/lpor.201300023
• Languages: English
• ISSNs: 1863-8880

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="lpor201200119-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>The defect chalcopyrite crystal HgGa₂S₄ has been employed in a 1064‐nm pumped optical parametric oscillator operating at 100 Hz, to generate ∼5 ns long idler pulses near 4 µm with energies as high as 6.1 mJ and average power of 610 mW. At crystal dimensions comparable to those available for the commercial AgGaS₂ crystal, operation of the 1064‐nm pumped HgGa₂S₄ OPO is characterized by much lower pump threshold and higher conversion efficiency, with the most important consequence that such a device might become practical at pump levels sufficiently lower than the optical damage threshold. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg26msqkmk" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>