Optimization of DC Reactive Magnetron Sputtering Deposition Process for Efficient YSZ Electrolyte Thin Film SOFC. Issue 2 (28th November 2012)

• Record Type: Journal Article
• Authors: Hidalgo, H.; Thomann, A.‐L.; Lecas, T.; Vulliet, J.; Wittmann‐Teneze, K.; Damiani, D.; Millon, E.; Brault, P.
• Is Part Of: Fuel cells. Volume 13:Issue 2(2013:Apr.)
• Page Start: 279
• Page End: 288
• Publication Date: 2012-11-28
• Subjects: Fuel cells -- Periodicals; 621.312429
• DOI: 10.1002/fuce.201200125
• Languages: English
• ISSNs: 1615-6846

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Yttria‐stabilized zirconia (YSZ, ZrO₂:Y₂O₃) thin films were deposited by reactive DC magnetron sputtering with a high deposition rate from a metallic target of Zr/Y in an argon/oxygen atmosphere. Plasma parameters and composition analysis of the gas phase reveal that the sputtering process in the "compound" mode is reached for a 2.5 sccm oxygen flow rate. Deposition onto silicon in "metal" mode at a flow rate close to the transition, allows obtaining at very high deposition rates (&gt;10 μm h^–1) a compact columnar stoichiometric crystallized YSZ film. When deposited on NiO‐YSZ commercial anode, the obtained coatings show the same properties. In spite of the complexity of the substrate (roughness and porosity), a compact and conformed layer was formed. Annealing treatments in air or hydrogen do not significantly alter the structure of the layers. Electrochemical test at 850 °C with a screen‐printed LSM (LaSrMnO₃) cathode exhibits a satisfying gastightness (OCV = 900 mV) and a maximum power density of 350 mW cm^–2.</p> </abstract>