Atmospheric Pressure Plasma ALD of Titanium Oxide1. Issue 4 (14th May 2013)

• Record Type: Journal Article
• Authors: Theirich, Detlef; Müller, Roman; Zilberberg, Kirill; Trost, Sara; Behrendt, Andreas; Riedl, Thomas; Knez, Mato; Yong, Qin
• Is Part Of: Chemical vapor deposition. Volume 19:Issue 4/6(2013:Jun.)
• Page Start: 167
• Page End: 173
• Publication Date: 2013-05-14
• Subjects: Chemical vapor deposition -- Periodicals; 671.735
• DOI: 10.1002/cvde.201207039
• Languages: English
• ISSNs: 0948-1907

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Atmospheric‐pressure plasma atomic layer deposition (APP‐ALD) of TiO_{<italic>x</italic>} at room temperature is reported for the first time. Layer properties of the APP‐ALD‐grown TiO_{<italic>x</italic>} are compared to those reported for the low‐pressure plasma ALD of TiO_{<italic>x</italic>}. The contribution of parasitic CVD to the process is discussed. The application of the resulting TiO_{<italic>x</italic>} layers as electron‐extraction interlayers in inverted organic solar cells (OSCs) is demonstrated. The characteristics of OSCs based on APP‐ALD‐grown TiO_{<italic>x</italic>} are similar to those of OSCs based on TiO_{<italic>x</italic>} prepared by low‐pressure thermal ALD or sol‐gel processing. APP‐ALD is intended to harvest the beneficial properties of ALD layers in a high‐throughput atmospheric processing environment.</p> </abstract>