Characterization of thin‐film a‐Si:H/µc‐Si:H tandem solar cells on glass substrates. Issue 5 (30th April 2013)

• Record Type: Journal Article
• Authors: Klossek, A.; Krause, C.; Arguirov, T.; Krause, H.‐M.; Seifert, W.; Friedrich, F.; Calnan, S.; Gabriel, O.; Stannowski, B.; Kittler, M.
• Is Part Of: Crystal research and technology. Volume 48:Issue 5(2013:May)
• Page Start: 279
• Page End: 286
• Publication Date: 2013-04-30
• Subjects: Crystallography -- Periodicals; 548
• DOI: 10.1002/crat.201200489
• Languages: English
• ISSNs: 0232-1300

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="crat201200489--abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Techniques such as photoluminescence (PL) and electron‐beam‐induced current (EBIC), have proven their effectiveness and applicability for solar materials. Although, the methods are standard techniques for multicrystalline Si PV, their application to thin films is challenging and requires special adjustment and a careful selection of the measuring parameters. Here we report on the investigation of thin‐film a‐Si:H/μc‐Si:H tandem solar cells on glass substrates. Homogeneous spatial distribution of the PL signals were observed, which are caused by the dominance of the surface recombination. A typical PL spectrum exhibits features of carriers trapped in deep states of a‐Si:H. PL is only detectable on the a‐Si:H layer, while EBIC signal is generated mainly in the μc‐Si:H layer. It is found out that the luminescence features of the thin a‐Si:H layer resemble those on bulk a‐Si:H. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg20p9fx8n" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>