Low‐Stress Silicon Nitride Platform for Mid‐Infrared Broadband and Monolithically Integrated Microphotonics. Issue 10 (17th July 2013)

• Record Type: Journal Article
• Authors: Lin, Pao Tai; Singh, Vivek; Lin, Hao‐Yu Greg; Tiwald, Tom; Kimerling, Lionel C.; Agarwal, Anuradha Murthy
• Is Part Of: Advanced optical materials. Volume 1:Issue 10(2013:Oct.)
• Page Start: 732
• Page End: 739
• Publication Date: 2013-07-17
• Subjects: Optical materials -- Periodicals; Photonics -- Periodicals; 620.11295
• DOI: 10.1002/adom.201300205
• Languages: English
• ISSNs: 2195-1071

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adom201300205-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>A monolithic Mid‐IR microphotonics platform</bold> is demonstrated by engineered Si‐rich and low‐stress silicon nitride (SiN_x) thin films. A measured optical transmission loss of &lt; 0.2 dB cm^‐1 is achieved over a broad mid‐IR spectrum. Using the SiN_x film an efficient mid‐IR directional coupler is developed that shows a high extinction ratio of 7 dB upon wavelength scanning (λ = 2.45–2.65 μm). <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg3srrjz8b" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>