Evidence of the Reverse Intersystem Crossing in Intra‐Molecular Charge‐Transfer Fluorescence‐Based Organic Light‐Emitting Devices Through Magneto‐Electroluminescence Measurements. Issue 5 (22nd April 2013)

• Record Type: Journal Article
• Authors: Peng, Qiming; Li, Weijun; Zhang, Shitong; Chen, Ping; Li, Feng; Ma, Yuguang
• Is Part Of: Advanced optical materials. Volume 1:Issue 5(2013:May)
• Page Start: 362
• Page End: 366
• Publication Date: 2013-04-22
• Subjects: Optical materials -- Periodicals; Photonics -- Periodicals; 620.11295
• DOI: 10.1002/adom.201300028
• Languages: English
• ISSNs: 2195-1071

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adom201300028-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>Experimental evidence for reverse intersystem crossing (RISC)</bold> in organic light‐emitting devices with small energy gaps between the singlet and triplet excited states is given using the magnetic field effect (MFE) on the electroluminescence (EL) of the devices. The EL decreases when an external magnetic field is applied, indicating that the RISC process occurs and promotes the exciton in the device. The MFE could be a good tool for exploring physical processes in organic semiconductors, especially when spin effects are involved. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg21ch3qtw" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>