Graphene: Van der Waals Epitaxial Double Heterostructure: InAs/Single‐Layer Graphene/InAs (Adv. Mater. 47/2013). (December 2013)

• Record Type: Journal Article
• Authors: Hong, Young Joon; Yang, Jae Won; Lee, Wi Hyoung; Ruoff, Rodney S.; Kim, Kwang S.; Fukui, Takashi
• Is Part Of: Advanced materials. Volume 25:Number 47(2013)
• Page Start: 6914
• Page End: 6914
• Publication Date: 2013-12
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201370295
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201370295-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Epitaxial semiconductor/graphene double heterostructures are fabricated by vapor‐phase van der Waals epitaxy of InAs on both sides of suspended graphene, as reported on page 6847. K. S. Kim, Y. J. Hong and co‐workers demonstrate that the weak van der Waals attraction facilitates a preferential growth direction of InAs exclusively along the As‐polar direction, which results in a polarity inversion of the double heterostructures. The first‐principles and density functional calculations clarify why and how the conductive graphene layer yields the polarity inversion for <italic>sp</italic>³/<italic>sp</italic>²/<italic>sp</italic>³‐type double heterostructures. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg3zmj291f" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>