High‐Performance Sensors Based on Molybdenum Disulfide Thin Films. (12th September 2013)

• Record Type: Journal Article
• Authors: Lee, Kangho; Gatensby, Riley; McEvoy, Niall; Hallam, Toby; Duesberg, Georg S.
• Is Part Of: Advanced materials. Volume 25:Number 46(2013)
• Page Start: 6699
• Page End: 6702
• Publication Date: 2013-09-12
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201303230
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201303230-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>High‐performance sensors</bold> based on molybdenum disulfide (MoS₂) grown by sulfurization of sputtered molybdenum layers are presented. Using a simple integration scheme, it is found that the electrical conductivity of MoS₂ films is highly sensitive to NH₃ adsorption, consistent with n‐type semiconducting behavior. A sensitivity of 300 ppb at room temperature is achieved, showing the high potential of 2D transition metal‐dichalcogenides for sensing. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg3zk6phcv" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>