Enhanced Charge Carrier Mobility in Two‐Dimensional High Dielectric Molybdenum Oxide (Adv. Mater. 1/2013). (2nd January 2013)

• Record Type: Journal Article
• Authors: Balendhran, Sivacarendran; Deng, Junkai; Ou, Jian Zhen; Walia, Sumeet; Scott, James; Tang, Jianshi; Wang, Kang L.; Field, Matthew R.; Russo, Salvy; Zhuiykov, Serge; Strano, Michael S.; Medhekar, Nikhil; Sriram, Sharath; Bhaskaran, Madhu; Kalantar‐zadeh, Kourosh
• Is Part Of: Advanced materials. Volume 25:Number 1(2013)
• Page Start: 108
• Page End: 108
• Publication Date: 2013-01-02
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201370007
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Extremely high carrier mobilities are achieved in layered molybdenum oxide by Sivacarendran Balendhran, Kourosh Kalantar‐zadeh, and co‐workers <ext-link ext-link-type="doi" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink">on page 109</ext-link>. This is achieved by intercalation of the octahedral molybdenum oxide lattice with hydrogen, which tunes the bandgap of the material. Carrier mobilities of 1100 cm² V⁻¹ s⁻¹ and greater are attained, highlighting the potential of ultrathin molybdenum oxide for high speed nanoelectronics. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg1p8tg843" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>