A Light Incident Angle Switchable ZnO Nanorod Memristor: Reversible Switching Behavior Between Two Non‐Volatile Memory Devices. (1st September 2013)

• Record Type: Journal Article
• Authors: Park, Jinjoo; Lee, Seunghyup; Lee, Junghan; Yong, Kijung
• Is Part Of: Advanced materials. Volume 25:Number 44(2013)
• Page Start: 6423
• Page End: 6429
• Publication Date: 2013-09-01
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201303017
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201303017-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>A light incident angle selectivity</bold> of a memory device is demonstrated. As a model system, the ZnO resistive switching device has been selected. Electrical signal is reversibly switched between memristor and resistor behaviors by modulating the light incident angle on the device. Moreover, a liquid passivation layer is introduced to achieve stable and reversible exchange between the memristor and WORM behaviors. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg3z2vx1gz" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>