A BDOPV‐Based Donor–Acceptor Polymer for High‐Performance n‐Type and Oxygen‐Doped Ambipolar Field‐Effect Transistors. (23rd August 2013)

• Record Type: Journal Article
• Authors: Lei, Ting; Dou, Jin‐Hu; Cao, Xiao‐Yu; Wang, Jie‐Yu; Pei, Jian
• Is Part Of: Advanced materials. Volume 25:Number 45(2013)
• Page Start: 6589
• Page End: 6593
• Publication Date: 2013-08-23
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201302278
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201302278-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>An electron‐deficient building block</bold> BDOPV is developed to construct a new donor–acceptor conjugated polymer BDOPV‐2T for high‐performance n‐type and oxygen‐doped ambipolar polymer field‐effect transistors. A high electron mobility up to 1.74 cm² V⁻¹ s⁻¹ is demonstrated under ambient conditions. Furthermore, the oxygen‐doping effect and possible mechanism are discussed. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg3z7f0kds" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>