Anti‐Solvent Derived Non‐Stacked Reduced Graphene Oxide for High Performance Supercapacitors. (21st June 2013)

• Record Type: Journal Article
• Authors: Yoon, Yeoheung; Lee, Keunsik; Baik, Chul; Yoo, Heejoun; Min, Misook; Park, Younghun; Lee, Sae Mi; Lee, Hyoyoung
• Is Part Of: Advanced materials. Volume 25:Number 32(2013)
• Page Start: 4437
• Page End: 4444
• Publication Date: 2013-06-21
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201301230
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>An anti‐solvent for graphene oxide (GO)</bold>, hexane, is introduced to increase the surface area and the pore volume of the non‐stacked GO/reduced GO 3D structure and allows the formation of a highly crumpled non‐stacked GO powder, which clearly shows ideal supercapacitor behavior. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg36gxzzbq" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>