Universal Electric‐Field‐Driven Resistive Transition in Narrow‐Gap Mott Insulators. (6th May 2013)

• Record Type: Journal Article
• Authors: Stoliar, Pablo; Cario, Laurent; Janod, Etiene; Corraze, Benoit; Guillot‐Deudon, Catherine; Salmon‐Bourmand, Sabrina; Guiot, Vincent; Tranchant, Julien; Rozenberg, Marcelo
• Is Part Of: Advanced materials. Volume 25:Number 23(2013)
• Page Start: 3222
• Page End: 3226
• Publication Date: 2013-05-06
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201301113
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>A striking universality in the electric‐field‐driven resistive switching</bold> is shown in three prototypical narrow‐gap Mott systems. This model, based on key theoretical features of the Mott phenomenon, reproduces the general behavior of this resistive switching and demonstrates that it can be associated with a dynamically directed avalanche. This model predicts non‐trivial accumulation and relaxation times that are verified experimentally. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg21kpzbgg" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>