Tunable Electronic Transport Properties of Metal‐Cluster‐Decorated III–V Nanowire Transistors. (20th June 2013)

• Record Type: Journal Article
• Authors: Han, Ning; Wang, Fengyun; Hou, Jared J.; Yip, Sen Po; Lin, Hao; Xiu, Fei; Fang, Ming; Yang, Zaixing; Shi, Xiaoling; Dong, Guofa; Hung, Tak Fu; Ho, Johnny C.
• Is Part Of: Advanced materials. Volume 25:Number 32(2013)
• Page Start: 4445
• Page End: 4451
• Publication Date: 2013-06-20
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201301362
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>A metal‐cluster‐decoration approach</bold> is utilized to tailor electronic transport properties (e.g., threshold voltage) of III–V NWFETs through the modulation of free carriers in the NW channel via the deposition of different metal clusters with different work function. The versatility of this technique has been demonstrated through the fabrication of high‐mobility enhancement‐mode InAs NW parallel FETs as well as the construction of low‐power InAs NW inverters. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg36gxztx1" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>