Electron Doping by Charge Transfer at LaFeO3/Sm2CuO4 Epitaxial Interfaces. (4th January 2013)

• Record Type: Journal Article
• Authors: Bruno, Flavio Y.; Schmidt, Rainer; Varela, Maria; Garcia‐Barriocanal, Javier; Rivera‐Calzada, Alberto; Cuellar, Fabian A.; Leon, Carlos; Thakur, Pardeep; Cezar, Julio C.; Brookes, Nicholas B.; Garcia‐Hernandez, Mar; Dagotto, Elbio; Pennycook, Stephen J.; Santamaria, Jacobo
• Is Part Of: Advanced materials. Volume 25:Number 10(2013)
• Page Start: 1468
• Page End: 1473
• Publication Date: 2013-01-04
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201203483
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>Using X‐ray absorption spectroscopy and electron energy loss spectroscopy with atomic‐scale spatial resolution</bold>, experimental evidence for charge transfer at the interface between the Mott insulators Sm₂CuO₄ and LaFeO₃ is obtained. As a consequence of the charge transfer, the Sm₂CuO₄ is doped with electrons and thus epitaxial Sm₂CuO₄/LaFeO₃ heterostructures become metallic. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg1v8tmgk6" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>