Enhanced Charge Carrier Mobility in Two‐Dimensional High Dielectric Molybdenum Oxide. (23rd October 2012)

• Record Type: Journal Article
• Authors: Balendhran, Sivacarendran; Deng, Junkai; Ou, Jian Zhen; Walia, Sumeet; Scott, James; Tang, Jianshi; Wang, Kang L.; Field, Matthew R.; Russo, Salvy; Zhuiykov, Serge; Strano, Michael S.; Medhekar, Nikhil; Sriram, Sharath; Bhaskaran, Madhu; Kalantar‐zadeh, Kourosh
• Is Part Of: Advanced materials. Volume 25:Number 1(2013)
• Page Start: 109
• Page End: 114
• Publication Date: 2012-10-23
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201203346
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>We demonstrate that the energy bandgap of layered, high‐dielectric α‐MoO₃</bold> can be reduced to values viable for the fabrication of 2D electronic devices. This is achieved through embedding Coulomb charges within the high dielectric media, advantageously limiting charge scattering. As a result, devices with α‐MoO₃ of ∼11 nm thickness and carrier mobilities larger than 1100 cm² V⁻¹ s⁻¹ are obtained. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg1p8tg89v" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>