Single‐Step Formation of Graphene on Dielectric Surfaces. (8th November 2012)

• Record Type: Journal Article
• Authors: Xiong, Wei; Zhou, Yun Shen; Jiang, Li Jia; Sarkar, Amitabha; Mahjouri‐Samani, Masoud; Xie, Zhi Qiang; Gao, Yang; Ianno, Natale Joseph; Jiang, Lan; Lu, Yong Feng
• Is Part Of: Advanced materials. Volume 25:Number 4(2013)
• Page Start: 630
• Page End: 634
• Publication Date: 2012-11-08
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201202840
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>The direct formation of graphene on various dielectric surfaces is successful</bold> via a single‐step rapid thermal processing (RTP) of substrates coated with amorphous carbon (C) and nickel (Ni) thin films. High‐quality graphene is obtained uniformly on the whole surface of wafers with a controlled number of graphene layers. The monolayer graphene exhibits a low sheet resistance and a high optical transmittance in the visible range. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg1p9n5f2d" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>