Graphene Nanoribbons: An Effective Approach to Achieve a Spin Gapless Semiconductor–Half‐Metal–Metal Transition in Zigzag Graphene Nanoribbons: Attaching A Floating Induced Dipole Field via π–π Interactions (Adv. Funct. Mater. 12/2013). (13th March 2013)

• Record Type: Journal Article
• Authors: Guan, Jia; Chen, Wei; Li, Yafei; Yu, Guangtao; Shi, Zhiming; Huang, Xuri; Sun, Chiachung; Chen, Zhongfang
• Is Part Of: Advanced functional materials. Volume 23:Number 12(2013)
• Page Start: 1478
• Page End: 1478
• Publication Date: 2013-03-13
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201370060
• Languages: English
• ISSNs: 1616-301X

Abstract

<abstract abstract-type="graphical" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <ext-link ext-link-type="doi" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink">On page 1507</ext-link>, Guangtao Yu, Xuri Huang, Zhongfang Chen, and co‐workers report that by attaching a floating induced dipole field via π–π interactions, spin gapless semiconducting (SGS)–half‐metallic–metallic transitions can be achieved in zigzag graphene nanoribbons. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg1v8t8p8h" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>