Flexible Electronics: High‐Speed, Low‐Voltage, and Environmentally Stable Operation of Electrochemically Gated Zinc Oxide Nanowire Field‐Effect Transistors (Adv. Funct. Mater. 14/2013). (4th April 2013)

• Record Type: Journal Article
• Authors: Nasr, Babak; Wang, Di; Kruk, Robert; Rösner, Harald; Hahn, Horst; Dasgupta, Subho
• Is Part Of: Advanced functional materials. Volume 23:Number 14(2013)
• Page Start: 1729
• Page End: 1729
• Publication Date: 2013-04-04
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201370068
• Languages: English
• ISSNs: 1616-301X

Abstract

<abstract abstract-type="graphical" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Part of an enhanced‐mode electrolyte‐gated nanowire channel metal oxide semiconductor field‐effect transistor (MOSFET) is illustrated. As reported by Subho Dasgupta and co‐workers <ext-link ext-link-type="doi" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink">on page 1750</ext-link>, the complete nanowire and a part of the in‐plane gate electrode are covered with a printed droplet of composite solid polymer electrolyte, working as a dielectric. A positive gate bias attracts cations (Li⁺) towards the nanowire channel resulting in accumulation of charge carriers and driving it to the conducting (ON) state. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg1x46qqw8" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>