Graphene/SiO2/p‐GaN Diodes: An Advanced Economical Alternative for Electrically Tunable Light Emitters. (11th March 2013)

• Record Type: Journal Article
• Authors: Chang, Che‐Wei; Tan, Wei‐Chun; Lu, Meng‐Lin; Pan, Tai‐Chun; Yang, Ying‐Jay; Chen, Yang‐Fang
• Is Part Of: Advanced functional materials. Volume 23:Number 32(2013)
• Page Start: 4043
• Page End: 4048
• Publication Date: 2013-03-11
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201203035
• Languages: English
• ISSNs: 1616-301X

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Advanced materials that combine novel functionality and ease of applicability are central to the development of light‐emitting diodes (LEDs), which is of ever increasing commercial importance. Here a new metal‐insulator‐semiconductor (MIS) LED structure that combines economical fabrication with novel device properties is reported. The presented MIS‐LED consists of a graphene electrode on p‐GaN substrate separated by an insulating SiO₂ layer. It is found that the MIS‐LED possesses a unique tunability of the electroluminescence spectra depending on the bias conditions. Tunnel injection from graphene into the p‐GaN can explain the difference in luminescence spectra under forward and reverse bias. The demonstrated MIS‐LED expands the use of graphene and also possibly allows the direct integration of light emitters with other circuit elements.</p> </abstract>