N‐Type Self‐Assembled Monolayer Field‐Effect Transistors and Complementary Inverters. (19th November 2012)

• Record Type: Journal Article
• Authors: Ringk, Andreas; Li, Xiaoran; Gholamrezaie, Fatemeh; Smits, Edsger C. P.; Neuhold, Alfred; Moser, Armin; Van der Marel, Cees; Gelinck, Gerwin H.; Resel, Roland; de Leeuw, Dago M.; Strohriegl, Peter
• Is Part Of: Advanced functional materials. Volume 23:Number 16(2013)
• Page Start: 2016
• Page End: 2023
• Publication Date: 2012-11-19
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201202888
• Languages: English
• ISSNs: 1616-301X

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>This work describes n‐type self‐assembled monolayer field‐effect transistors (SAMFETs) based on a perylene derivative which is covalently fixed to an aluminum oxide dielectric via a phosphonic acid linker. N‐type SAMFETs spontaneously formed by a single layer of active molecules are demonstrated for transistor channel length up to 100 μm. Highly reproducible transistors with electron mobilities of 1.5 × 10⁻³ cm² V⁻¹ s⁻¹ and on/off current ratios up to 10⁵ are obtained. By implementing n‐type and p‐type transistors in one device, a complimentary inverter based solely on SAMFETs is demonstrated for the first time.</p> </abstract>