1–6 GHz ultrawideband 4 W single‐ended GaN power amplifier. Issue 1 (25th November 2013)

• Record Type: Journal Article
• Authors: Giofre, Rocco; Colantonio, Paolo; Giannini, Franco
• Is Part Of: Microwave and optical technology letters. Volume 56:Issue 1(2014:Jan.)
• Page Start: 215
• Page End: 217
• Publication Date: 2013-11-25
• Subjects: Microwaves -- Periodicals; Optics -- Periodicals; 621
• DOI: 10.1002/mop.28080
• Languages: English
• ISSNs: 0895-2477

Abstract

<abstract abstract-type="main"> <title>ABSTRACT</title> <p>In this contribution, the design approach and the experimental results of an ultrawideband power amplifier in GaN technology is presented. The amplifier is designed in a single‐ended configuration by using a 0.5 μm GaN HEMT with 1 mm gate periphery. The realized amplifier shows an efficiency higher than 40% with an output power greater than 36 dBm and an associated gain around 10 dB from 1 to 6 GHz. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:215–217, 2014</p> </abstract>