Direct Growth of Nanocrystalline Graphene/Graphite Transparent Electrodes on Si/SiO2 for Metal‐Free Schottky Junction Photodetectors. (1st September 2013)

• Record Type: Journal Article
• Authors: Zhang, Zengxing; Guo, Yunxian; Wang, Xiaojuan; Li, Dong; Wang, Fengli; Xie, Sishen
• Is Part Of: Advanced functional materials. Volume 24:Number 6(2014)
• Page Start: 835
• Page End: 840
• Publication Date: 2013-09-01
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201301924
• Languages: English
• ISSNs: 1616-301X

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Conventional methods to produce graphene/silicon Schottky junctions inevitably involve graphene transfer and metal deposition, which leads to the techniques being complicated, high‐cost, and environmentally unfriendly. It is possible to directly grow hybrid nanocrystalline graphene/graphite transparent electrodes from photoresist on quartz without any catalyst. Due to the source material being photoresist, nanographene/graphite patterns can easily be made on Si/SiO₂ structures to form nanographene/silicon Schottky junctions via commercial photolithography and silicon techniques. The obtained Schottky junctions exhibit excellent properties with respect to photodetection, with photovoltage responsivity of 300 V W^‐1 at a light power of 0.2 μW and photovoltage response time of less than 0.5 s. The devices also exhibit an excellent reliability with the photovoltage deviating less than 1% when cycled over 200 times.</p> </abstract>